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Surface chemical analysis — Scanning-probe microscopy — Determination of geometric quantities using SPM: Calibration of measuring systems
$211.30 Add to cart
Surface chemical analysis — Scanning-probe microscopy — Measurement of drift rate
$140.11 Add to cart
Surface chemical analysis — Secondary ion mass spectrometry — Calibration of the mass scale for a time-of-flight secondary ion mass spectrometer
$108.47 Add to cart
Surface chemical analysis — Secondary ion mass spectrometry — Correction method for saturated intensity in single ion counting dynamic secondary ion mass spectrometry
$103.95 Add to cart
Surface chemical analysis — Secondary ion mass spectrometry — Method for determining yield volume in argon cluster sputter depth profiling of organic materials
$170.62 Add to cart
Surface chemical analysis — Secondary ion mass spectrometry — Method for the measurement of mass resolution in SIMS
$103.95 Add to cart
Surface chemical analysis — Secondary-ion mass spectrometry — Determination of boron atomic concentration in silicon using uniformly doped materials
$140.11 Add to cart
Surface chemical analysis — Secondary-ion mass spectrometry — Determination of relative sensitivity factors from ion-implanted reference materials
$45.20 Add to cart
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth calibration for silicon using multiple delta-layer reference materials
$140.11 Add to cart
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of arsenic in silicon
$103.95 Add to cart
Surface chemical analysis — Secondary-ion mass spectrometry — Repeatability and constancy of the relative-intensity scale in static secondary-ion mass spectrometry
$68.93 Add to cart
Surface chemical analysis — Sputter depth profiling — Optimization using layered systems as reference materials
$103.95 Add to cart

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1000 Bacardi Road,
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The Bahamas

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Surface chemical analysis — Scanning-probe microscopy — Determination of geometric quantities using SPM: Calibration of measuring systems

Surface chemical analysis — Scanning-probe microscopy — Measurement of drift rate

Surface chemical analysis — Secondary ion mass spectrometry — Calibration of the mass scale for a time-of-flight secondary ion mass spectrometer

Surface chemical analysis — Secondary ion mass spectrometry — Correction method for saturated intensity in single ion counting dynamic secondary ion mass spectrometry

Surface chemical analysis — Secondary ion mass spectrometry — Method for determining yield volume in argon cluster sputter depth profiling of organic materials

Surface chemical analysis — Secondary ion mass spectrometry — Method for the measurement of mass resolution in SIMS

Surface chemical analysis — Secondary-ion mass spectrometry — Determination of boron atomic concentration in silicon using uniformly doped materials

Surface chemical analysis — Secondary-ion mass spectrometry — Determination of relative sensitivity factors from ion-implanted reference materials

Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth calibration for silicon using multiple delta-layer reference materials

Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of arsenic in silicon

Surface chemical analysis — Secondary-ion mass spectrometry — Repeatability and constancy of the relative-intensity scale in static secondary-ion mass spectrometry

Surface chemical analysis — Sputter depth profiling — Optimization using layered systems as reference materials

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